DocumentCode :
472735
Title :
A 100nm Emitter Transistor Fabricated with Direct EB Writing for High-Speed Bipolar LSIs
Author :
Tamaki, Yoichi ; Murai, Fumio ; Sagara, Kazuhiko ; Anzai, Akio
Author_Institution :
Central Research Laboratory. Hitachi Ltd. Kokubunji. Tokyo 185. Japan
fYear :
1987
fDate :
22-23 May 1987
Firstpage :
31
Lastpage :
32
Keywords :
Bipolar transistors; Doping; Laboratories; Lithography; Semiconductor films; Shape; Size control; Stress; Surface topography; Writing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location :
Karuizawa, Japan
Type :
conf
Filename :
4480407
Link To Document :
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