• DocumentCode
    472736
  • Title

    Reduced Process Sensitivity of Polysilicon Emitter Contacts for VLSI Bipolar Transistors

  • Author

    Crabbe, E. ; Hoyt, J.L. ; Moslehi, M.M. ; Pease, R.F.W. ; Gibbons, J.F.

  • Author_Institution
    Stanford Electronics Laboratories Stanford University, Stanford, CA 94305
  • fYear
    1987
  • fDate
    22-23 May 1987
  • Firstpage
    33
  • Lastpage
    34
  • Keywords
    Backscatter; Bipolar transistors; Doping; Laboratories; Rapid thermal annealing; Rapid thermal processing; Silicon; Surface morphology; Temperature; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1987. Digest of Technical Papers. Symposium on
  • Conference_Location
    Karuizawa, Japan
  • Type

    conf

  • Filename
    4480408
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=472736