DocumentCode :
472737
Title :
Thin-Base Bipolar Technology by Low-Temperature Photo-Epitaxy
Author :
Sugii, T. ; Yamazaki, T. ; Fukano, T. ; Ito, T.
Author_Institution :
Fujitsu Laboratories Ltd. Atsugi 10-1, Morinosato-wakamiya, Atsugi 243-01, Japan
fYear :
1987
fDate :
22-23 May 1987
Firstpage :
35
Lastpage :
36
Keywords :
Bipolar transistors; Boron; Doping; Electrodes; Epitaxial growth; Epitaxial layers; Fabrication; Substrates; Temperature dependence; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location :
Karuizawa, Japan
Type :
conf
Filename :
4480409
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=472737
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