DocumentCode :
472740
Title :
Advanced One Micron BICMOS Technology for High Speed 256K SRAMS
Author :
Bastani, B. ; Lage, C. ; Wong, L. ; Small, J. ; Lahri, R. ; Bouknight, L. ; Bowman, T. ; Manoliu, J. ; Tuntasood, P.
Author_Institution :
BiCMOS Integration, Unit Process Development, Device Physics, and Design Groups Fairchild Semiconductor Puyallup, WA 98373
fYear :
1987
fDate :
22-23 May 1987
Firstpage :
41
Lastpage :
42
Abstract :
One micron BiCMOS technology for high speed 256K SRAM is developed. Advanced lithography and processing techniques support high density CMOS design with ECL performance. This technology is also extended to logic applications.
Keywords :
Beak; BiCMOS integrated circuits; Bipolar transistors; Capacitance; Contact resistance; Implants; MOSFET circuits; Random access memory; Ring oscillators; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location :
Karuizawa, Japan
Type :
conf
Filename :
4480412
Link To Document :
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