Title :
Relationship between Gate Bias and Hot-Carrier Induced Instabilities in P-Channel MOSFETs
Author :
Brassington, M.P. ; Razouk, R.R.
Author_Institution :
Schlumberger Palo Alto Research - Fairchild 4001 Miranda Ave., Palo Alto. CA94304. USA.
Abstract :
Maxima in the magnitude of hot-carrier induced instabilities in the saturation characteristics of short p-channel MOSFETs occur for bias conditions that cause the peak gate current to flow. However, parameters measured in the linear regime may also show an additional maxima for stress conditions that lead to maximum substrate current. Device reliability studies should take this distinction between linear and saturation degradation into consideration.
Keywords :
Charge carrier processes; Current measurement; Dielectric substrates; Electron traps; Hot carrier injection; Hot carriers; MOSFETs; Stability; Stress; Very large scale integration;
Conference_Titel :
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location :
Karuizawa, Japan
