Title :
Sub Micron P-MOSFETs under Static and SWAP Stress
Author :
ühlhoff, H.M. ; Murkin, P. ; Orlowski, M. ; Weber, W. ; Küsters, K.H. ; Muller, Wayne ; Rogers, C.M. ; Wendt, H.
Author_Institution :
Corporate Research and Technology, Techn. Center for Microelectronics Siemens AG Otto-Hahn-Ring 6, 8000 Munich 83, West Germany
Keywords :
Annealing; Degradation; Electron traps; Hot carriers; MOSFET circuits; Microelectronics; Optical saturation; Random access memory; Stress; Voltage;
Conference_Titel :
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location :
Karuizawa, Japan
