Title :
Ion-Enhanced Evaporated Tungsten for VLSI Applications
Author :
Joshi, R.V. ; Nguyen, T.N. ; Floro, J. ; Kim, Y.H. ; d´Heurle, F. ; Angilello, J.
Author_Institution :
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598
Keywords :
Annealing; Argon; Conductivity; Ion sources; Stress control; Substrates; Temperature; Thermal stresses; Tungsten; Very large scale integration;
Conference_Titel :
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location :
Karuizawa, Japan
