Ion-Enhanced Evaporated Tungsten for VLSI Applications

Author

Joshi, R.V. ; Nguyen, T.N. ; Floro, J. ; Kim, Y.H. ; d´Heurle, F. ; Angilello, J.

Author_Institution

IBM T.J. Watson Research Center, Yorktown Heights, New York 10598

fYear

1987

fDate

22-23 May 1987

Firstpage

Lastpage

Keywords

Annealing; Argon; Conductivity; Ion sources; Stress control; Substrates; Temperature; Thermal stresses; Tungsten; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1987. Digest of Technical Papers. Symposium on

Conference_Location

Karuizawa, Japan

Type

Filename

4480421

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