Title :
Submicron Tungsten Gate MOSFET with 10 nm Gate Oxide
Author :
Davari, B. ; Ting, C.-Y. ; Ahn, K.Y. ; Basavaiah, S. ; Hu, C.-K. ; Taur, Y. ; Wordeman, M.R. ; Aboelfotoh, O. ; Krusin-Elbaum, L. ; Joshi, R.V. ; Polcari, M.R.
Author_Institution :
IBM Thomas J. Watson Research Center Yorktown Heights, NY 10598
Abstract :
Submicron tungsten gate MOSFET with 10 nm gate oxide has been demonstrated for the first time. The results ranging from W stability against SiO2to excellent thin oxide MOS properties and high FET transconductance, demonstrate the feasibility and advantages of the tungsten gate for submicron technologies. In applications such as high density DRAM, tungsten can be a primary candidate for gate material due to its low resistivity and midgap work function.
Keywords :
Annealing; Conductivity; Electron mobility; Etching; FETs; Implants; MOS devices; MOSFET circuits; Transconductance; Tungsten;
Conference_Titel :
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location :
Karuizawa, Japan
