Title :
Effects of Titanium Salicide Process on Oxide Charge Trapping and Hot-Electron Reliability in Submicron MOS Devices for VLSI
Author :
Chang, Shuo-Tung ; Chiu, Kuang
Author_Institution :
Hewlett-Packard Laboratories 3500 Deer Creek Road, Palo Alto CA 94304
Keywords :
Annealing; Charge carrier processes; Deuterium; Electron traps; Hydrogen; MOS devices; Nitrogen; Titanium; Very large scale integration; Voltage;
Conference_Titel :
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location :
Karuizawa, Japan
