A High Aspect Ratio and High Throughput Sio2 Planarization Technology with Bias-ECR Plasma Deposition

For the Bias-ECR plasma deposition, the SiO2 filling characteristics are improved by applying rf bias to the substrate. Further, the surface of the interconnections with the aspect ratio 2.0 can be planarized perfectly. The Bias-ECR plasma deposition utilizing the selective etching of 02 gas is effective for reducing the time of the planarization process. Therefore, the Bias-ECR plasma deposition is successfully applicable to the planarization of the submicron interconnection.