DocumentCode :
472756
Title :
A Novel Contact-Hole Filling Technology with Selective CVD-W for Shallow Junctions
Author :
Kakiuchi, T. ; Yamamoto, H. ; Fujita, T.
Author_Institution :
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd. Yagumonakamachi, Moriguchi, Osaka 570, Japan
fYear :
1987
fDate :
22-23 May 1987
Firstpage :
73
Lastpage :
74
Keywords :
Breakdown voltage; Coatings; Contact resistance; Degradation; Electric resistance; Filling; Nonhomogeneous media; Sputtering; Substrates; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location :
Karuizawa, Japan
Type :
conf
Filename :
4480428
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=472756
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