DocumentCode
472756
Title
A Novel Contact-Hole Filling Technology with Selective CVD-W for Shallow Junctions
Author
Kakiuchi, T. ; Yamamoto, H. ; Fujita, T.
Author_Institution
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd. Yagumonakamachi, Moriguchi, Osaka 570, Japan
fYear
1987
fDate
22-23 May 1987
Firstpage
73
Lastpage
74
Keywords
Breakdown voltage; Coatings; Contact resistance; Degradation; Electric resistance; Filling; Nonhomogeneous media; Sputtering; Substrates; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location
Karuizawa, Japan
Type
conf
Filename
4480428
Link To Document