DocumentCode
472759
Title
Hot Electron Energy Analysis Using a High-Speed Monte Carlo Simulation
Author
Kato, K.
Author_Institution
VLSI Research Center, Toshiba Corporation 1, Komukai Toshiba-cho, Saiwaiku, Kawasaki, 210 Japan
fYear
1987
fDate
22-23 May 1987
Firstpage
79
Lastpage
80
Abstract
Based on a rigorous model for impact ionization, the hot carrier effect of MOSFET has been investigated in detail, using high-speed Monte Carlo simulation. The analysis revealed that the hot carrier effect is mainly affected by carrier temperature, but is suppressed by impact ionization.
Keywords
Acoustic scattering; Electrons; Hot carrier effects; Hot carriers; Impact ionization; MOSFET circuits; Optical scattering; Phonons; Temperature distribution; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location
Karuizawa, Japan
Type
conf
Filename
4480431
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