Title :
Hot Electron Energy Analysis Using a High-Speed Monte Carlo Simulation
Author_Institution :
VLSI Research Center, Toshiba Corporation 1, Komukai Toshiba-cho, Saiwaiku, Kawasaki, 210 Japan
Abstract :
Based on a rigorous model for impact ionization, the hot carrier effect of MOSFET has been investigated in detail, using high-speed Monte Carlo simulation. The analysis revealed that the hot carrier effect is mainly affected by carrier temperature, but is suppressed by impact ionization.
Keywords :
Acoustic scattering; Electrons; Hot carrier effects; Hot carriers; Impact ionization; MOSFET circuits; Optical scattering; Phonons; Temperature distribution; Voltage;
Conference_Titel :
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location :
Karuizawa, Japan
