A Band-to-Band Tunneling Effect in the Trench Transistor Cell

Author

Banerjee, Sanjay ; Coleman, Jim ; Richardson, Bill ; Shah, Ashwin

Author_Institution

Semiconductor Process and Design Center Texas Instruments Inc. Dallas. Texas 75265

fYear

1987

fDate

22-23 May 1987

Firstpage

Lastpage

Keywords

Boron; Capacitors; Doping; Etching; Leakage current; Plugs; Substrates; Testing; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1987. Digest of Technical Papers. Symposium on

Conference_Location

Karuizawa, Japan

Type

Filename

4480440

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