DocumentCode :
472780
Title :
Limits to Scaling MOS Devices
Author :
El-Mansy, Youssef A.
Author_Institution :
Intel Corporation 3585 SW 198th Ave., Aloha, OR 97007
fYear :
1981
fDate :
9-11 Sept. 1981
Firstpage :
16
Lastpage :
17
Keywords :
Breakdown voltage; Capacitance; Charge carrier processes; Doping; Electric breakdown; Electron mobility; Geometry; Impact ionization; MOS devices; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1981. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
Type :
conf
Filename :
4480503
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=472780
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