Title :
An Asymmetric Effect of Short Channel MOSFETs
Author :
Koshimaru, S. ; Fukuma, M. ; Tsujide, T. ; Yamanaka, T. ; Okuto, Y.
Author_Institution :
Nippon Electric Company Ltd., Kawasaki, Japan
Keywords :
Electric variables; Geometry; Implants; Ion implantation; MOS devices; MOSFETs; Silicon; Surface treatment; Threshold voltage; Very large scale integration;
Conference_Titel :
VLSI Technology, 1981. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
