DocumentCode
472782
Title
Characteristics of a Buried-Channel, Graded Drain with Punch-Through Stopper (BGP) MOS Device
Author
Sunami, Hideo ; Shimohigashi, Katsuhiro ; Hashimoto, Norikazu
Author_Institution
Hitachi Ltd., Central Research Laboratory Kokubunji, Tokyo 185, Japan
fYear
1981
fDate
9-11 Sept. 1981
Firstpage
20
Lastpage
21
Keywords
Boron; Breakdown voltage; Circuits; Laboratories; Large scale integration; MOS devices; Secondary generated hot electron injection; Stress; Threshold voltage; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1981. Digest of Technical Papers. Symposium on
Conference_Location
Maui, HI, USA
Type
conf
Filename
4480505
Link To Document