Title :
Characteristics of a Buried-Channel, Graded Drain with Punch-Through Stopper (BGP) MOS Device
Author :
Sunami, Hideo ; Shimohigashi, Katsuhiro ; Hashimoto, Norikazu
Author_Institution :
Hitachi Ltd., Central Research Laboratory Kokubunji, Tokyo 185, Japan
Keywords :
Boron; Breakdown voltage; Circuits; Laboratories; Large scale integration; MOS devices; Secondary generated hot electron injection; Stress; Threshold voltage; Very large scale integration;
Conference_Titel :
VLSI Technology, 1981. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
