DocumentCode :
472783
Title :
Submicron MOSFET Structure for Minimizing Channel Hot-Electron Injection
Author :
Takeda, Eiji ; Kume, Hitoshi ; Toyabe, Toru ; Asai, Shojiro
Author_Institution :
Central Research Laboratory, Hitachi, Ltd. Kokubunji, Tokyo, Japan
fYear :
1981
fDate :
9-11 Sept. 1981
Firstpage :
22
Lastpage :
23
Keywords :
Channel hot electron injection; Electrodes; Hot carrier injection; Impurities; Laboratories; MOS devices; MOSFET circuits; Secondary generated hot electron injection; Very large scale integration; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1981. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
Type :
conf
Filename :
4480506
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=472783
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