Title :
CMOS Technologies for VLSI Circuits
Author :
Kohyama, Susumu ; Sato, Tai
Author_Institution :
Semiconductor Device Engineering Laboratory Toshiba Corporation, Kawasaki, Japan
Keywords :
CMOS memory circuits; CMOS process; CMOS technology; Capacitance; Geometry; Immune system; MOS devices; Power dissipation; Substrates; Very large scale integration;
Conference_Titel :
VLSI Technology, 1981. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA