DocumentCode
472789
Title
The Potential of Bipolar Devices for VLSI
Author
Ning, Tak H.
Author_Institution
IBM Thomas J. Watson Research Center Yorktown Heights, New York 10598
fYear
1981
fDate
9-11 Sept. 1981
Firstpage
34
Lastpage
35
Keywords
Contact resistance; Current density; Delay; Doping; Lithography; Logic circuits; MOSFET circuits; Parasitic capacitance; Power dissipation; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1981. Digest of Technical Papers. Symposium on
Conference_Location
Maui, HI, USA
Type
conf
Filename
4480512
Link To Document