Title :
Bipolar Technologies for High Speed VLSIs
Author :
Nakamura, Hiroaki ; Sakai, Tetsushi
Author_Institution :
Musashino Electrical Communication Laboratory 3-9-11, Midoricho, Musashinoshi, Tokyo, 180 Japan
Keywords :
Delay effects; Doping profiles; Electrodes; Fabrication; Frequency; Impurities; Parasitic capacitance; Stability; Temperature; Very large scale integration;
Conference_Titel :
VLSI Technology, 1981. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
