DocumentCode :
472795
Title :
The Impact of Polysilicon-Resistor Scaling on the Performance of a VLSI Static RAM Cell
Author :
Lu, Nicky C C ; Gerzberg, Levy ; Meindl, James D.
Author_Institution :
Integrated Circuits Laboratory Stanford University, Stanford, California 94305
fYear :
1981
fDate :
9-11 Sept. 1981
Firstpage :
46
Lastpage :
47
Keywords :
Circuit analysis; Driver circuits; Grain size; Laboratories; Read-write memory; Resistors; Steady-state; Switches; Very large scale integration; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1981. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
Type :
conf
Filename :
4480518
Link To Document :
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