Title :
Full Isolation Technology by Porous Oxidized Silicon
Author :
Imai, Kazuo ; Unno, Hideyuki ; Muramoto, Susumu
Author_Institution :
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashinoshi 3-9-11, Tokyo 180, Japan
Keywords :
CMOS process; CMOS technology; Crystallization; Dielectric substrates; FETs; Isolation technology; Oxidation; Protons; Silicon; Voltage;
Conference_Titel :
VLSI Technology, 1981. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
