DocumentCode

472811

Title

Full Isolation Technology by Porous Oxidized Silicon

Author

Imai, Kazuo ; Unno, Hideyuki ; Muramoto, Susumu

Author_Institution

Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashinoshi 3-9-11, Tokyo 180, Japan

fYear

1981

fDate

9-11 Sept. 1981

Firstpage

76

Lastpage

77

Keywords

CMOS process; CMOS technology; Crystallization; Dielectric substrates; FETs; Isolation technology; Oxidation; Protons; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1981. Digest of Technical Papers. Symposium on

Conference_Location

Maui, HI, USA

Type

conf

Filename

4480534