Title :
Feasibility Study of SOS VLSI: Capacitance Analysis in Downward Scaling and Improvement of Thin Films by a Solid-Phase Epitaxy
Author :
Taguchi, Shinji ; Yoshii, Toshio ; Uchida, Yukimasa ; Tango, Hiroyuki
Author_Institution :
Semiconductor Device Engineering Lab., R & D Center, Toshiba Corporation 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
Keywords :
Crystallization; Epitaxial growth; Leakage current; Optical scattering; Parasitic capacitance; Semiconductor thin films; Silicon; Thin film devices; Transistors; Very large scale integration;
Conference_Titel :
VLSI Technology, 1981. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
