A New Application of RIE to Planarization and Edge Rounding of Sio2 Hole in the Al Multi-Level Interconnection

Author

Hazuki, Y. ; Moriya, T. ; Kashiwagi, M.

Author_Institution

Toshiba Research and Development Center Toshiba Corp. Kawashaki, Japan

fYear

1982

fDate

1-3 Sept. 1982

Firstpage

Lastpage

Keywords

Hydrogen; Insulation; Planarization; Plasma applications; Polymer films; Resists; Silicon compounds; Space technology; Sputter etching; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1982. Digest of Technical Papers. Symposium on

Conference_Location

Oiso, Japan

Type

Filename

4480558

Link To Document