DocumentCode :
47283
Title :
High Temperature Interconnect and Die Attach Technology: Au–Sn SLID Bonding
Author :
Tollefsen, Torleif A. ; Larsson, A. ; Lovvik, O.M. ; Aasmundtveit, Knut E.
Author_Institution :
SINTEF ICT Instrumentation, Oslo, Norway
Volume :
3
Issue :
6
fYear :
2013
fDate :
Jun-13
Firstpage :
904
Lastpage :
914
Abstract :
Au–Sn solid–liquid interdiffusion (SLID) bonding is a novel and promising interconnect and die attach technology for high temperature (HT) applications. In combination with silicon carbide (SiC), Au–Sn SLID has the potential to be a key technology for the next generation of HT electronic devices. However, limited knowledge about Au–Sn SLID bonding for HT applications is a major restriction to fully realizing the HT potential of SiC devices. Two different processing techniques—electroplating of Au/Sn layers and sandwiching of eutectic Au–Sn preform between electroplated Au layers—have been studied in a simplified metallization system. The latter process was further investigated in two different {\\rm Cu}/{\\rm Si}_{3}{\\rm N}_{4}/{\\rm Cu}/{\\rm Ni\\hbox {-}P}/{\\rm Au\\hbox {-}Sn}/{\\rm Ni}/{\\rm Ni}_{2}{\\rm Si}/{\\rm SiC} systems (different Au-layer thickness). Die shear tests and cross-sections have been performed on as-bonded, thermally cycled, and thermally aged samples to characterize the bonding properties associated with the different processing techniques, metallization schemes, and environmental stress tests. A uniform Au-rich bond interface was produced (the \\zeta phase with a melting point of 522 ^{\\circ}{\\rm C} ). The importance of excess Au on both substrate and chip side in the final bond is demonstrated. It is shown that Au–Sn SLID can absorb thermo-mechanical stresses induced by large coefficient of thermal expansion mismatches (up to 12 ppm/K) in a packaging system during HT thermal cycling. The bonding strength of Au–Sn SLID is shown to be superb, exceeding 78 MPa. However, after HT thermal ageing, the \\zeta phase was first- converted into the more Au-rich \\beta phase. This created physical contact between the Sn and Ni atoms, resulting in brittle {\\rm Ni}_{x}{\\rm Sn}_{y} phases, reducing the bond strength. Density functional theory calculations have been performed to demonstrate that the formation of {\\rm Ni}_{x}{\\rm Sn}_{y} in preference to the Au-rich Au–Sn phases is energetically favorable.
Keywords :
Au–Sn solid–liquid interdiffusion (SLID) bonding; density functional theory (DFT); die attach; high temperature (HT); interconnect technology;
fLanguage :
English
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
2156-3950
Type :
jour
DOI :
10.1109/TCPMT.2013.2253353
Filename :
6513242
Link To Document :
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