Title :
Mo-Silicided Low Resistance Shallow Junctions
Author :
Nagasawa, E. ; Morimoto, Masayuki ; Okabayashi, H.
Author_Institution :
Basic Technology Research Laboratories Nippon Electric Co., Ltd., Kawasaki, Japan
Keywords :
Annealing; Electric resistance; Fabrication; Ion implantation; MOSFETs; Silicidation; Silicides; Silicon; Surface morphology; Surface resistance;
Conference_Titel :
VLSI Technology, 1982. Digest of Technical Papers. Symposium on
Conference_Location :
Oiso, Japan
