472835

Self-Aligned-Contact Technology for High Density MOS VLSI

Sakamoto, Mitsuru ; Kudoh, Osamu ; Yamamoto, Hirohiko ; Sekido, Kenji

Nippon Electric Co., Ltd. Sagamihara, Kanagawa 229, Japan

1982

1-3 Sept. 1982

34

37

Breakdown voltage; Capacitance; Dielectric films; Electrodes; Etching; Oxidation; Process design; Random access memory; Silicon; Very large scale integration;

English

ieee

VLSI Technology, 1982. Digest of Technical Papers. Symposium on

Oiso, Japan

conf

4480566