472836

Self-Aligned Graded-Drain Structure for Short Channel MOS Transisitor

Satoh, S. ; Ohbayashi, Y. ; Mizuguchi, K. ; Yoneda, M. ; Abe, H.

LSI R&D Laboratory, Mitsubishi Electric Corp., Itami, Hyogo 664 Japan

1982

1-3 Sept. 1982

38

39

Anisotropic magnetoresistance; Breakdown voltage; Electrons; Etching; Laboratories; Large scale integration; MOSFETs; Research and development; Very large scale integration; Voltage control;

English

ieee

VLSI Technology, 1982. Digest of Technical Papers. Symposium on

Oiso, Japan

conf

4480567