DocumentCode
472836
Title
Self-Aligned Graded-Drain Structure for Short Channel MOS Transisitor
Author
Satoh, S. ; Ohbayashi, Y. ; Mizuguchi, K. ; Yoneda, M. ; Abe, H.
Author_Institution
LSI R&D Laboratory, Mitsubishi Electric Corp., Itami, Hyogo 664 Japan
fYear
1982
fDate
1-3 Sept. 1982
Firstpage
38
Lastpage
39
Keywords
Anisotropic magnetoresistance; Breakdown voltage; Electrons; Etching; Laboratories; Large scale integration; MOSFETs; Research and development; Very large scale integration; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1982. Digest of Technical Papers. Symposium on
Conference_Location
Oiso, Japan
Type
conf
Filename
4480567
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