472837

An as-P(N+-N-) Double Diffused Drain MOSEFT for VLSIs

Takeda, Eiji ; Kume, Hitoshi ; Nakagome, Yoshinobu ; Asi, Shojiro

Central Research Laboratory, Hitachi, Ltd. Kokubunji, Tokyo, Japan

1982

1-3 Sept. 1982

40

41

Channel hot electron injection; Current measurement; Degradation; Hot carrier effects; Impact ionization; Laboratories; MOSFET circuits; Threshold voltage; Transconductance; Very large scale integration;

English

ieee

VLSI Technology, 1982. Digest of Technical Papers. Symposium on

Oiso, Japan

conf

4480568