An Optimized Half Micron Device Using The Double-Implanted Lightly Doped Drain/Source Structure

Author

Ogura, S. ; Codella, C. ; Rovedo, N. ; Shepard, J. ; Riseman, J.

Author_Institution

International Business Machines Corporation Hopewell Junction, NY 12533

fYear

1982

fDate

1-3 Sept. 1982

Firstpage

Lastpage

Keywords

Boron; Capacitance; Design optimization; Doping; Electric breakdown; Hardware; Impact ionization; Implants; Power supplies; Silicides;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1982. Digest of Technical Papers. Symposium on

Conference_Location

Oiso, Japan

Type

Filename

4480569

Link To Document