Title :
An Optimized Half Micron Device Using The Double-Implanted Lightly Doped Drain/Source Structure
Author :
Ogura, S. ; Codella, C. ; Rovedo, N. ; Shepard, J. ; Riseman, J.
Author_Institution :
International Business Machines Corporation Hopewell Junction, NY 12533
Keywords :
Boron; Capacitance; Design optimization; Doping; Electric breakdown; Hardware; Impact ionization; Implants; Power supplies; Silicides;
Conference_Titel :
VLSI Technology, 1982. Digest of Technical Papers. Symposium on
Conference_Location :
Oiso, Japan
