DocumentCode :
472840
Title :
Threshold Voltage Deviation in Very Small MOS Transistors Due to Local Impurity Fluctuations
Author :
Hagiwara, Takaaki ; Yamaguchi, Ken ; Asai, Shojiro
Author_Institution :
Central Research Laboratory, Hitachi Ltd. Kokubunji, Tokyo 185, JAPAN
fYear :
1982
fDate :
1-3 Sept. 1982
Firstpage :
46
Lastpage :
47
Keywords :
Breakdown voltage; Dielectric breakdown; Fluctuations; Hot carrier injection; Impurities; Ion implantation; Laboratories; MOS devices; MOSFETs; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1982. Digest of Technical Papers. Symposium on
Conference_Location :
Oiso, Japan
Type :
conf
Filename :
4480571
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=472840
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