Title :
High Performance Dynamic RAM Using Double Aluminum Layer
Author :
Taniguchi, M. ; Ohbayashi, Y. ; Yamada, M. ; Nagayama, Y. ; Sato, S. ; Nakano, T.
Author_Institution :
LSI R&D Laboratory, Mitsubishi Electric Co., 4-1, Mizuhara, Itami, Hyogo 664 Japan
Keywords :
Aluminum; Circuits; DRAM chips; Error analysis; Large scale integration; Parasitic capacitance; Power supplies; Random access memory; Research and development; Very large scale integration;
Conference_Titel :
VLSI Technology, 1982. Digest of Technical Papers. Symposium on
Conference_Location :
Oiso, Japan
