DocumentCode :
472859
Title :
A Highly Sensitive Positive Electron Resist (FBM-G)
Author :
Asakawa, Hiroshi ; Kogure, Osamu
Author_Institution :
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Tokai, Ibaraki 319-11, Japan
fYear :
1982
fDate :
1-3 Sept. 1982
Firstpage :
88
Lastpage :
89
Keywords :
Adhesives; Dry etching; Electron beams; Laboratories; Resists; Semiconductor films; Silicon compounds; Telegraphy; Telephony; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1982. Digest of Technical Papers. Symposium on
Conference_Location :
Oiso, Japan
Type :
conf
Filename :
4480590
Link To Document :
بازگشت