DocumentCode :
472863
Title :
Electron Beam Testing or VLSIs
Author :
Ishikawa, M. ; Koike, H. ; Sekine, M.
Author_Institution :
Semiconductor Device Engineering Laboratory Toshiba Corporation, Kawasaki, Japan
fYear :
1982
fDate :
1-3 Sept. 1982
Firstpage :
96
Lastpage :
97
Abstract :
Electron beam testing has many advantages, such as the electron beam diameter of the order of micrometers or less, no loading capacitance, high operating frequencies and nondestructive testing. Therefore, if we choose appropriate acceleration voltages to avoid the charging of devices, it will be a very useful tool for VLSI internal measurements. And it is possible to reduce the turnaround time of redesigns and to get much information for optimizing the design in a shorter time.
Keywords :
Capacitance; Circuit testing; Delay; Electron beams; Laboratories; Large scale integration; Mechanical variables measurement; Microcomputers; Probes; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1982. Digest of Technical Papers. Symposium on
Conference_Location :
Oiso, Japan
Type :
conf
Filename :
4480594
Link To Document :
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