DocumentCode :
472866
Title :
Modeling and Simulation of Hot Carrier Effects in MOSFETs
Author :
Wada, M. ; Shibata, T. ; Iizuka, H. ; Dang, R.L.M.
Author_Institution :
Toshiba R&D Center Toshiba Corporation, Kawasaki, Japan
fYear :
1982
fDate :
1-3 Sept. 1982
Firstpage :
102
Lastpage :
103
Keywords :
Circuit simulation; Degradation; Electrons; Hot carrier effects; Hot carriers; MOSFETs; Probability; Research and development; Threshold voltage; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1982. Digest of Technical Papers. Symposium on
Conference_Location :
Oiso, Japan
Type :
conf
Filename :
4480597
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=472866
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