DocumentCode :
472867
Title :
Reactive Ion Etching of Poly-Si Employing Cl2 and Cl2/H2 Systems
Author :
Watanabe, T. ; Shibagaki, M. ; Horiike, Y.
Author_Institution :
Toshiba Corporation, Kawasaki, Japan
fYear :
1982
fDate :
1-3 Sept. 1982
Firstpage :
104
Lastpage :
105
Keywords :
Anisotropic magnetoresistance; Control systems; Effluents; Etching; Fluid flow; Gases; Hydrogen; Pressure control; Voltage; Weight control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1982. Digest of Technical Papers. Symposium on
Conference_Location :
Oiso, Japan
Type :
conf
Filename :
4480598
Link To Document :
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