• DocumentCode
    472868
  • Title

    Parasitic Resistance Effects on Static MOS RAM

  • Author

    Shinohara, H. ; Anami, K. ; Yoshimoto, M. ; Hirata, Y. ; Nakano, T.

  • Author_Institution
    LSI R&D Laboratory, Mitsubishi Electric Corp. Itami, Japan
  • fYear
    1982
  • fDate
    1-3 Sept. 1982
  • Firstpage
    106
  • Lastpage
    107
  • Keywords
    Circuits; Electric resistance; Inverters; Laboratories; Large scale integration; Random access memory; Read-write memory; Research and development; Very large scale integration; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1982. Digest of Technical Papers. Symposium on
  • Conference_Location
    Oiso, Japan
  • Type

    conf

  • Filename
    4480599