DocumentCode
472872
Title
A New Isolation Technology for Bipolar Devices by Low Pressure Selective Silicon Epitaxy
Author
Hine, S. ; Hirao, T. ; Kayano, S. ; Tsubouchi, N.
Author_Institution
LSI Research and Developement Laboratory Mitsubishi Electric Corp., Itami, Japan
fYear
1982
fDate
1-3 Sept. 1982
Firstpage
116
Lastpage
117
Keywords
Atomic layer deposition; Boron; Electric breakdown; Electric variables; Epitaxial growth; Epitaxial layers; Fabrication; Isolation technology; Large scale integration; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1982. Digest of Technical Papers. Symposium on
Conference_Location
Oiso, Japan
Type
conf
Filename
4480603
Link To Document