Title :
A New Isolation Technology for Bipolar Devices by Low Pressure Selective Silicon Epitaxy
Author :
Hine, S. ; Hirao, T. ; Kayano, S. ; Tsubouchi, N.
Author_Institution :
LSI Research and Developement Laboratory Mitsubishi Electric Corp., Itami, Japan
Keywords :
Atomic layer deposition; Boron; Electric breakdown; Electric variables; Epitaxial growth; Epitaxial layers; Fabrication; Isolation technology; Large scale integration; Silicon;
Conference_Titel :
VLSI Technology, 1982. Digest of Technical Papers. Symposium on
Conference_Location :
Oiso, Japan
