Title :
Interfacial Oxidation of Ta2O5-Si Systems for High-Density D-RAM
Author :
Kato, T. ; Ito, T. ; Taguchi, M. ; Nakamura, T. ; Ishikawa, H.
Author_Institution :
Fujitsu Laboratories Ltd., Atsugi 1677 Ono, Atsugi 243-01, Japan
Abstract :
The authors developed a new method of oxidation in which oxidizing species are applied through Ta2O5 films. Effective breakdown fields of the developed films are sharply distributed around 17 MV/cm. The developed films with an upper electrode of MoSix (x¿2) will be useful to the production of ultra-high density D-RAM.
Keywords :
Annealing; Capacitors; Dielectric substrates; Dielectric thin films; Diodes; Electrodes; Leakage current; Material storage; Oxidation; Semiconductor films;
Conference_Titel :
VLSI Technology, 1983. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
Print_ISBN :
4-930813-05-0
