DocumentCode
472910
Title
The Influence of Thermal Silicon Nitride Formation on VLSI Fabrication
Author
Shintani, Akira ; Kusaka, Takahisa ; Mizuo, Shoichi ; Hayashi, Kunio ; Okuhira, Hidekazu
Author_Institution
Central Research Laboratory, Hitachi, Ltd. Kokubunji, Tokyo 185, Japan
fYear
1983
fDate
13-15 Sept. 1983
Firstpage
90
Lastpage
91
Keywords
Dielectric substrates; Dielectric thin films; FETs; Fabrication; MOS capacitors; Nitrogen; Oxidation; Semiconductor films; Silicon compounds; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1983. Digest of Technical Papers. Symposium on
Conference_Location
Maui, HI, USA
Print_ISBN
4-930813-05-0
Type
conf
Filename
4480651
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