• DocumentCode
    472911
  • Title

    Electrical Characteristics of Devices Fabricated with Ultra-Thin Thermally Grown Silicon Nitride and Nitroxide Gate Insulators

  • Author

    Moslehi, Mehrdad M. ; Saraswat, Krishna C.

  • Author_Institution
    Integrated Circuits Laboratory Stanford University Stanford, CA 94305
  • fYear
    1983
  • fDate
    13-15 Sept. 1983
  • Firstpage
    92
  • Lastpage
    93
  • Keywords
    Capacitance-voltage characteristics; Dielectrics and electrical insulation; Electric breakdown; Electric variables; Kinetic theory; Semiconductor films; Silicon; Temperature; Thermal conductivity; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1983. Digest of Technical Papers. Symposium on
  • Conference_Location
    Maui, HI, USA
  • Print_ISBN
    4-930813-05-0
  • Type

    conf

  • Filename
    4480652
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=472911