Title :
Electrical Characteristics of Devices Fabricated with Ultra-Thin Thermally Grown Silicon Nitride and Nitroxide Gate Insulators
Author :
Moslehi, Mehrdad M. ; Saraswat, Krishna C.
Author_Institution :
Integrated Circuits Laboratory Stanford University Stanford, CA 94305
Keywords :
Capacitance-voltage characteristics; Dielectrics and electrical insulation; Electric breakdown; Electric variables; Kinetic theory; Semiconductor films; Silicon; Temperature; Thermal conductivity; Very large scale integration;
Conference_Titel :
VLSI Technology, 1983. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
Print_ISBN :
4-930813-05-0
