Title :
Sub-Micron NMOS Technology for High Speed VLSI
Author :
Smith, George E.
Author_Institution :
Bell Laboratories Murray Hill, New Jersey 07974
Abstract :
One micron NMOS technology has been demonstrated as a viable high speed technology. Simulations and preliminary experiments show that the technology can be extended down to 0.1 ¿m but no further. New concepts will be needed to reach the ultimate limit of 0.02 ¿m.
Keywords :
Clocks; Electron beams; Etching; Fabrication; Integrated circuit interconnections; Lithography; MOS devices; Space technology; Very large scale integration; Wiring;
Conference_Titel :
VLSI Technology, 1983. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
Print_ISBN :
4-930813-05-0
