Title :
Effects of Plasma-Processing on EEPROM Tunnel Oxides
Author :
Faraone, L. ; Ipri, A.C.
Author_Institution :
RCA Laboratories Princeton, NJ 08540 U.S.A.
Keywords :
Current density; EPROM; Etching; Nonvolatile memory; Plasma applications; Plasma chemistry; Plasma devices; Silicon; Tunneling; Voltage;
Conference_Titel :
VLSI Technology, 1983. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
Print_ISBN :
4-930813-05-0
