DocumentCode :
472919
Title :
SEPOX Compatible High Density Floating Gate EPROM Structure
Author :
Matsukawa, N. ; Niitsu, Y. ; Matsunaga, J. ; Nozawa, H. ; Kohyama, S.
Author_Institution :
Semiconductor Device Engineering Laboratory Toshiba Corporation, Kawasaki, Japan
fYear :
1983
fDate :
13-15 Sept. 1983
Firstpage :
108
Lastpage :
109
Keywords :
Capacitance; EPROM; Large scale integration; Logic devices; Microprocessors; Nonvolatile memory; Oxidation; Testing; Threshold voltage; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1983. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
Print_ISBN :
4-930813-05-0
Type :
conf
Filename :
4480660
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=472919
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