DocumentCode :
472920
Title :
An Improved Fabrication Process for Multi-Level Polysilicon Structures
Author :
Faraone, L.
Author_Institution :
RCA Laboratories Princeton, NJ 08540 U.S.A.
fYear :
1983
fDate :
13-15 Sept. 1983
Firstpage :
110
Lastpage :
111
Keywords :
Amorphous materials; Breakdown voltage; Electrodes; Fabrication; Oxidation; Rough surfaces; Semiconductor films; Silicon; Surface roughness; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1983. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
Print_ISBN :
4-930813-05-0
Type :
conf
Filename :
4480661
Link To Document :
بازگشت