472928

An Aluminum Gate One Megabit DRAM

Gaworecki, J.M. ; Furst, R.C. ; Lewis, S.C.

IBM General Technology Division Essex Junction, VT. 05452

1984

10-12 Sept. 1984

14

15

Aluminum; Capacitors; Circuits; Content addressable storage; DRAM chips; MOS devices; Manufacturing processes; Random access memory; Semiconductor device manufacture; Silicon;

English

ieee

VLSI Technology, 1984. Digest of Technical Papers. Symposium on

San Diego, CA, USA

4-930813-08-5

conf

4480677