Title :
An Aluminum Gate One Megabit DRAM
Author :
Gaworecki, J.M. ; Furst, R.C. ; Lewis, S.C.
Author_Institution :
IBM General Technology Division Essex Junction, VT. 05452
Keywords :
Aluminum; Capacitors; Circuits; Content addressable storage; DRAM chips; MOS devices; Manufacturing processes; Random access memory; Semiconductor device manufacture; Silicon;
Conference_Titel :
VLSI Technology, 1984. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
4-930813-08-5