DocumentCode
472933
Title
A Fully Scaled Half-Micrometer NMOS Technology Using Direct-Write E-Beam Lithography
Author
Wordeman, M.R. ; Schweighart, A.M. ; Dennard, R.H. ; Sai-Halasz, G.A. ; Molzen, W.W.
Author_Institution
IBM Thomas J. Watson Research Center Yorktown Heights, New York 10598
fYear
1984
fDate
10-12 Sept. 1984
Firstpage
26
Lastpage
27
Keywords
Circuits; DRAM chips; Fabrication; Lithography; MOS devices; Power dissipation; Ring oscillators; Temperature sensors; Threshold voltage; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1984. Digest of Technical Papers. Symposium on
Conference_Location
San Diego, CA, USA
Print_ISBN
4-930813-08-5
Type
conf
Filename
4480682
Link To Document