Title :
A Fully Scaled Half-Micrometer NMOS Technology Using Direct-Write E-Beam Lithography
Author :
Wordeman, M.R. ; Schweighart, A.M. ; Dennard, R.H. ; Sai-Halasz, G.A. ; Molzen, W.W.
Author_Institution :
IBM Thomas J. Watson Research Center Yorktown Heights, New York 10598
Keywords :
Circuits; DRAM chips; Fabrication; Lithography; MOS devices; Power dissipation; Ring oscillators; Temperature sensors; Threshold voltage; Voltage control;
Conference_Titel :
VLSI Technology, 1984. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
4-930813-08-5
