Title :
EEPROM Cell with HB (One Half Barrier Height) Oxide for VLSI
Author :
Nozawa, Hiroshi ; Matsukawa, Naohiro ; Morita, Shigeru ; Miyamoto, Jun-ichi ; Iizuka, Tetsuya
Author_Institution :
Semiconductor Device Engineering Laboratory, Toshiba Kawasaki, Japan
Keywords :
Controllability; EPROM; Electrons; Laboratories; Semiconductor devices; Silicon; Tunneling; Very large scale integration; Voltage; Writing;
Conference_Titel :
VLSI Technology, 1984. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
4-930813-08-5
