Title :
Bi-CMOS Circuits for High Performance VLSI
Author :
Lee, S.C. ; Schucker, Douglas W. ; Hickman, Patrick T.
Author_Institution :
Motorola, Inc. 2200 W. Broadway Road, Mesa, AZ 85202
Abstract :
A circuit technique combining CMOS and bipolar circuits to achieve high performance at low power has been demonstrated. The circuits have been fabricated and measurement results showed the performance is substantially better than CMOS. Applications of this technique to gate arrays and standard cell based VLSI are discussed.
Keywords :
CMOS process; CMOS technology; Circuit noise; Circuit simulation; Degradation; Delay; Driver circuits; Inverters; Parasitic capacitance; Very large scale integration;
Conference_Titel :
VLSI Technology, 1984. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
4-930813-08-5
