Title :
Disilane Photo-Epitaxy for VLSI
Author :
Yamazaki, T. ; Ito, T. ; Ishikawa, H.
Author_Institution :
Fujitsu Laboratories Ltd. 1677 Ono, Atsugi, Japan 243-01
Abstract :
The low-temperature photo-epitaxy technique has been developed using Si2H6 source gas. The Si2H6 gas is directly dissociated under UV light irradiation resulting in increase of growth rate. The epitaxial growth has been possible at a substrate temperature of 630°C. The nearly abrupt impurity profile is obtained which is advantageous for production of VLSI devices with small dimensions.
Keywords :
Epitaxial growth; Epitaxial layers; Hydrogen; Impurities; Indium tin oxide; Inductors; Silicon; Substrates; Temperature dependence; Very large scale integration;
Conference_Titel :
VLSI Technology, 1984. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
4-930813-08-5
